Diodes DMG6602SVT - Manual (Page 3)

DMG6602SVT
Document number: DS35106 Rev. 6 - 2
3 of 10
www.diodes.com
May 2012
© Diodes Incorporated
DMG6602SVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics – Q1 NMOS
@ T A = 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
30 - - V V GS = 0V, I D = 250
μA
Zero Gate Voltage Drain Current I
DSS
- - 1.0 µA V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1.0 - 2.3 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
38
55 60
100
m Ω
V
GS
= 10V, I
D
= 3.1A
V GS = 4.5V, I D = 2A
Forward Transfer Admittance |Y
fs
| - 4 - S V
DS
= 5V, I
D
= 3.1A
Diode Forward Voltage V
SD
- 0.8 1 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 290 400
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.2MHz
Output Capacitance C
oss
- 40 80
Reverse Transfer Capacitance C rss
- 40 80
Gate Resistance R
g
- 1.4 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
- 4 6
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 3.1A
Total Gate Charge (V GS = 10V) Q g
- 9 13
V
DS
= 15V, V
GS
= 10V, I
D
= 3A Gate-Source Charge Q
gs
- 1.2 -
Gate-Drain Charge Q
gd
- 1.5 -
Turn-On Delay Time t
D(on)
- 3 -
ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3 Ω, R
L
= 4.7 Ω
Turn-On Rise Time t
r
- 5 -
Turn-Off Delay Time t
D(off)
- 13 -
Turn-Off Fall Time t
f
- 3 -
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.0
2.0
4.0
6.0
8.0
10.0
V , GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
GS
I,
D
R
A
IN
C
U
R
R
EN
T
(
A
)
D
0
2
4
6
8
10
0 1 2 3 4 5
V = 5.0V
DS