Diodes DMG6602SVT - Manual (Page 5)

DMG6602SVT
Document number: DS35106 Rev. 6 - 2
5 of 10
www.diodes.com
May 2012
© Diodes Incorporated
DMG6602SVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
f = 1MHz
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C Ave (pF)
RSS
10
100
1000
0 5 10 15 20 25 30
C Ave (pF)
ISS
C Ave (pF)
OSS
0
2
4
6
8
10
0 2 4 6 8 10
V = 10V
I = 3.0A
DS
D
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
J(max)
A
V = 10V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W