Diodes DMC4029SSD - Manual (Page 3)

DMC4029SSD
Document number: DS36350 Rev. 3 - 2
3 of 8
www.diodes.com
March 2014
© Diodes Incorporated
DMC4029SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Electrical Characteristics P-Channel Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-40 ⎯ ⎯ V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 µA V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.0 ⎯ -3.0 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)
⎯ 33 45
m Ω
V
GS
= -10V, I
D
= -5A
⎯ 40 55 V
GS
= -4.5V, I
D
= -4A
Diode Forward Voltage V
SD
⎯ -0.7 -1.0 V V
GS
= 0V, I
S
= -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 1154 ⎯
pF
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 84 ⎯
Reverse Transfer Capacitance C
rss
⎯ 66 ⎯
Gate Resistance R
G
⎯ 12.6 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
⎯ 10.6 ⎯
nC V DS = -20V, I D = -4.9A
Total Gate Charge (V
GS
= -10V) Q
g
⎯ 21.5 ⎯
Gate-Source Charge Q
gs
⎯ 2.2 ⎯
Gate-Drain Charge Q
gd
⎯ 3.3 ⎯
Turn-On Delay Time t
D(on)
⎯ 8.7 ⎯
nS
V DS = -20V, I D = -3.9A
V GS = -4.5V, R G = 1 Ω
Turn-On Rise Time t
r
⎯ 19.6 ⎯
Turn-Off Delay Time t
D(off)
⎯ 34.9 ⎯
Turn-Off Fall Time t
f
⎯ 25.5 ⎯
Body Diode Reverse Recovery Time t
rr
⎯ 9.61 ⎯ nS I
S
= -3.9A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
⎯ 3.3 ⎯ nC I
S
= -3.9A, dI/dt = 100A/μs
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
N-Channel Q2
0.0
5.0
10.0
15.0
20.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS V = 4.5V
GS
V = 10V
GS
V = 5.0V
GS
V = 4.0V
GS
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I,
D
R
AI
N
C
U
R
R
ENT (
A
)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A