Diodes DMC4029SSD - Manual (Page 4)

DMC4029SSD
Document number: DS36350 Rev. 3 - 2
4 of 8
www.diodes.com
March 2014
© Diodes Incorporated
DMC4029SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0.022
0.024
0 5 10 15 20
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AI
N-
S
O
U
R
CE
O
N-
R
ES
IS
TA
NCE (
)
DS
(O
N)
Ω
V = 4.5V
GS
V = 10V
GS
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
3 4 5 6 7 8
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
Ω
I = 5.0A
D
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AI
N-
S
O
U
R
CE
O
N-
R
ES
IS
TA
NCE (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0
0.5
1
1.5
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
LI
Z
E
D)
DS
(O
N)
V = 4.5V
I = 5A
GS
D
V = V
I = 10A
GS
D
10
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
ST
A
N
C
E (
)
DS(
O
N
)
Ω
V = 4.5V
I = 5A
GS
D
V = V
I = 10A
GS
D
10
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
I = 1mA
D
I = 250µA
D
V
, GA
T
E
T
HRESHOL
D VOL
TA
G
E
(
V
)
GS
(t
h)