Diodes DMG4812SSS - Manual

DMG4812SSS
Document number: DS35071 Rev. 2 - 2
1 of 6
www.diodes.com
January 2011
© Diodes Incorporated
DMG4812SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
V (BR)DSS R DS(on)
I
D
max
T
A
= 25°C
30V
15m
Ω @ V
GS
= 10V 10.7A
18.5m Ω @ V
GS
= 4.5V 9.6A
Features
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low R
DS(ON)
- minimizes conduction losses
• Low
V
SD
- reducing the losses due to body diode conduction
• Low
Q rr - lower Q rr of the integrated Schottky reduces body
diode switching losses
•
Low gate capacitance (Q g /Q gs ) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
•
Avalanche rugged – I AR and E AR rated
•
Lead Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
•
ESD Protected
•
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC
Converters
• Power management functions
Mechanical Data
• Case: SO-8
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram Below
• Weight: 0.072 grams (approximate)
Ordering Information
(Note 3)
Part Number Case Packaging
DMG4812SSS-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View Top View
Internal Schematic
S
D
D
G
D
D
S
S
Logo
Part no.
Year: “09” = 2009
Xth week: 01 ~ 53
1 4
8 5
G4812SS
YY WW
Year: “10” = 2010
ESD PROTECTED