Diodes DMG4812SSS - Manual (Page 2)

DMG4812SSS
Document number: DS35071 Rev. 2 - 2
2 of 6
www.diodes.com
January 2011
© Diodes Incorporated
DMG4812SSS
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 4) V
GS
= 10V
Steady
State
T A = 25°C
T A = 85°C
I
D
8
6.4
A
Continuous Drain Current (Note 5) V
GS
= 10V t ≤ 10 sec
T A = 25°C
T A = 85°C
I
D
10.7
8.6
A
Continuous Drain Current (Note 5) V GS = 4.5V t ≤ 10 sec
T A = 25°C
T A = 85°C
I D
9.6
7.7
A
Pulsed Drain Current (Note 6) I
DM
45 A
Avalanche Current (Notes 6 & 7) I
AR
13 A
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH E
AR
25.4 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
1.54 W
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4) R θJA 81 °C/W
Power Dissipation (Note 5) P
D
2.8 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 5) R θJA 45 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
@ T
A
= 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current I DSS
- - 150 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
1.0 - 2.3 V V DS = V GS , I D = 250 μA
Static Drain-Source On-Resistance R DS (ON)
- 11 15
m Ω
V
GS
= 10V, I
D
= 10.7A
- 16.5 18.5 V
GS
= 4.5V, I
D
= 9.6A
Forward Transfer Admittance |Y
fs
| - 20 - S V
DS
= 5V, I
D
= 10.7A
Diode Forward Voltage V
SD
- 0.36 0.5 V V
GS
= 0V, I
S
= 1A
Maximum Body-Diode + Schottky Continuous Current I
S
- - 5 A -
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 1849 - pF
V
DS
=15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 158 - pF
Reverse Transfer Capacitance C
rss
- 123 - pF
Gate Resistance R
g
0.54 2.0 4.0 Ω V
DS
=0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 4.5V Q
g
- 18.5 - nC
V
DS
= 15V, V
GS
= 10V,
I
D
= 9.6A
Total Gate Charge V
GS
= 10V Q
g
- 43 - nC
Gate-Source Charge Q
gs
- 4.7 - nC
Gate-Drain Charge Q
gd
- 4.0 - nC
Turn-On Delay Time t
D(on)
- 6.62 - ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3 Ω, R
L
= 15 Ω, I
D
= 1A
Turn-On Rise Time t r
- 8.73 - ns
Turn-Off Delay Time t
D(off)
- 36.41 - ns
Turn-Off Fall Time t
f
- 4.69 - ns
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 1 oz. Copper, single sided , device is measured at t
≤ 10 sec.
6. Repetitive rating, pulse width limited by junction temperature.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.