Dmg4812sss – Diodes DMG4812SSS User Manual

Page 4

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DMG4812SSS

Document number: DS35071 Rev. 2 - 2

4 of 6

www.diodes.com

January 2011

© Diodes Incorporated

DMG4812SSS




Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

A

0

0.5

1.0

1.5

2.0

2.5

3.0

V,

G

A

T

E

T

H

R

ES

H

O

LD

V

O

L

T

A

G

E (

V

)

GS

(T

H

)

I = 100mA

D

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 8 Diode Forward Voltage vs. Current

V

, SOURCE-DRAIN VOLTAGE (V)

SD

I,

S

O

U

R

C

E

C

U

R

R

EN

T

(A

)

S

T = 25°C

A

0

5

10

15

20

25

30

Fig. 9 Typical Total Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

10

1,000

10,000

C

,

C

A

P

A

C

IT

A

N

C

E (

p

F

)

100

C

iss

C

rss

C

oss

f = 1MHz

0

10

20

30

Fig. 10 Typical Leakage Current

vs. Drain-Source Voltage

V

, DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

I,

L

E

A

K

A

G

E

C

U

R

R

E

N

T

A

)

DS

S

T = 25°C

A

T = 85°C

A

T = 125°C

A

0

5

10

15

20

25

30

35

40

45

Fig. 11 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

g

0

2

4

6

8

10

V,

G

A

T

E-

S

O

U

R

C

E V

O

L

T

A

G

E (

V)

GS

V

= 15V

I = 12.7A

DS

D


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