Diodes DMS3016SSS User Manual
Dms3016sss new prod uc t, Features, Mechanical data
DMS3016SSS
Document number: DS32266 Rev. 3 - 2
1 of 6
September 2010
© Diodes Incorporated
DMS3016SSS
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
•
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low
R
DS(ON)
- minimizes conduction losses
• Low
V
SD
- reducing the losses due to body diode conduction
• Low
Q
rr
- lower Q
rr
of the integrated Schottky reduces body
diode switching losses
•
Low gate capacitance (Q
g
/Q
gs
) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
•
Avalanche rugged – I
AR
and E
AR
rated
•
Lead Free, RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SO-8
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram Below
•
Marking Information: See Page 5
•
Ordering Information: See Page 5
•
Weight: 0.072 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 3) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
9.8
6.3
A
Pulsed Drain Current (Note 4)
I
DM
90 A
Avalanche Current (Note 4) (Note 5)
I
AR
13 A
Repetitive Avalanche Energy (Note 4) (Note 5) L = 0.3mH
E
AR
25.4 mJ
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 3)
P
D
1.54 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3)
R
θJA
81 °C/W
Operating and Storage Temperature Range
T
J
,
T
STG
-55 to +150
°C
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our webs3. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
Top View
Top View
Internal Schematic
S
D
D
G
D
D
S
S