Dms3016sss new prod uc t, Electrical characteristics, Dms3016sss – Diodes DMS3016SSS User Manual

Page 2

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DMS3016SSS

Document number: DS32266 Rev. 3 - 2

2 of 6

www.diodes.com

September 2010

© Diodes Incorporated

DMS3016SSS

NEW PROD

UC

T






Electrical Characteristics

@

T

A

= 25°C unless otherwise stated

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

30 - - V

V

GS

= 0V, I

D

= 250

μA

Zero Gate Voltage Drain Current

I

DSS

- -

0.1

mA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

±100

nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

1.0 - 2.3 V

V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

- 9 13

V

GS

= 10V, I

D

= 9.8A

- 11 16

V

GS

= 4.5V, I

D

= 9.8A

Forward Transfer Admittance

|Y

fs

|

- 5 - S

V

DS

= 5V, I

D

= 9.8A

Diode Forward Voltage

V

SD

- 0.4 1 V

V

GS

= 0V, I

S

= 1A

Maximum Body-Diode + Schottky Continuous Current

I

S

- - 5 A

-

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

- 1849 - pF

V

DS

=15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 158 - pF

Reverse Transfer Capacitance

C

rss

- 123 - pF

Gate Resistance

R

g

0.53 2.68 4.82 Ω

V

DS

=0V, V

GS

= 0V, f = 1MHz

Total Gate Charge V

GS

= 4.5V

Q

g

- 18.5 - nC

V

DS

= 15V, V

GS

= 10V,

I

D

= 9.8A

Total Gate Charge V

GS

= 10V

Q

g

- 43 - nC

Gate-Source Charge

Q

gs

- 4.7 - nC

Gate-Drain Charge

Q

gd

- 4.0 - nC

Turn-On Delay Time

t

D(on)

- 6.62 - ns

V

GS

= 10V, V

DS

= 10V,

R

G

= 3

Ω, R

L

= 1.2

Turn-On Rise Time

t

r

- 8.73 - ns

Turn-Off Delay Time

t

D(off)

- 36.41 - ns

Turn-Off Fall Time

t

f

- 4.69 - ns

Notes:

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.






0

0.5

1

1.5

2

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

10

15

20

25

30

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

5

V

= 2.0V

GS

V

= 2.2V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4.5V

GS

V

= 4.0V

GS

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

0

1

1.5

2

2.5

3

0.5

0

5

10

15

20

25

30

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

V

= 85°C

GS

V

= 125°C

GS

V

= 25°C

GS

V

= -55°C

GS

V

= 150°C

GS

V

= 5V

DS









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