Diodes DMS3016SSS - Manual (Page 4)

DMS3016SSS
Document number: DS32266 Rev. 3 - 2
4 of 6
www.diodes.com
September 2010
© Diodes Incorporated
DMS3016SSS
NEW PROD
UC
T
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
1,000
10,000
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
100
C
iss
C
rss
C
oss
f = 1MHz
0 10 20 30
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(µ
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
0 5 10 15 20 25 30 35 40 45
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
V = 15V
I = 12.7A
DS
D
0.001 0.01 0.1 1 10 100
Fig. 12 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001 1,000
0.001
0.01
0.1
1
r(
t),
T
R
A
N
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 80°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5