Diodes LMN200B01 - Manual (Page 2)

DS30651 Rev. 7 - 2 2 of 10 LMN200B01
www.diodes.com
T
C
U
D
O
R
P
W
E
N
@ T
A
= 25
°
C unless otherwise specified
@ T
A
= 25 ° C unless otherwise specified
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO -50 V
Collector-Emitter Voltage V
CEO -50 V
Supply Voltage V
cc -50 V
Input Voltage V
in +5 to -6 V
Output Current I
C -200 mA
Sub-Component Device:
N-MOSFET with Gate Pull-Down Resistor (Q2)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS 60 V
Drain Gate Voltage (R
GS
≤ 1M Ω ) V
DGR 60 V
Gate-Source Voltage Continuous
V
GSS
+/-20
V
Pulsed (tp<50 uS) +/-40
Drain Current (Page 1: Note 3) Continuous (V
gs
= 10V)
I
D
115
mA
Pulsed (tp <10 uS, Duty Cycle <1%) 800
Continuous Source Current I
S 115 mA