Diodes LMN200B01 - Manual (Page 5)

DS30651 Rev. 7 - 2 5 of 10 LMN200B01
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T
C
U
D
O
R
P
W
E
N
Typical Pre-Biased PNP Transistor (Q1) Characteristics
I , COLLECTOR CURRENT (A)
C
Fig. 5 V vs. I
CE(SAT) C
V
, C
O
L
L
E
C
T
O
R
V
O
L
T
A
G
E
(
V
)
C
E
(S
A
T
)
0.6
0
0.1
0.2
0.3
0.4
0.5
0.01 0.1 1
I /I = 20
C B
T =
A
150 °C
T =
A
125 °C
T =
A
25 °C
T =
A
85 °C
T =
A
-55 °C
I , COLLECTOR CURRENT (A)
C
Fig. 4 V vs. I
CE(SAT) C
V
, C
O
L
L
E
C
T
O
R
V
O
L
T
A
G
E
(
V
)
C
E
(S
A
T
)
0.01 0.1 1
0
0.1
0.2
0.3
0.4
I /I = 10
C B
T =
A
150 °C
T =
A
125 °C
T =
A
-55 °C
T =
A
85 °C
T =
A
25 °C
I , COLLECTOR CURRENT (mA)
C
Fig. 7 V vs. I
BE(ON) C
V
,
B
A
S
E
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
B
E
(O
N
)
1 10 100 1000
0
0.5
1
1.5
2
2.5
3 I /I = 10
C B
V = 5V
CE
T =
A
85 °C T =
A
125 °C
T =
A
150 °C
T =
A
25 °C
T =
A
-55 °C
I , COLLECTOR CURRENT (mA)
C
Fig. 6 V vs. I
BE(SAT) C
V
, B
A
S
E
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
B
E
(S
A
T
)
1 10 100 1000
0
5
10
15
20
25
30
I /I = 10
C B
T =
A
150 °C
T =
A
125 °C
T =
A
25 °C
T =
A
-55 °C
T =
A
85 °C
I , COLLECTOR CURRENT (mA)
C
Fig. 8 h vs. I
FE C
h
,
D
C
C
U
R
R
E
N
T
G
A
IN
F
E
1 10 100 1000
0
100
200
300
400
T =
A
125 °C
V = 5V
CE
T =
A
25 °C
T =
A
-55 °C
T =
A
150 °C
T =
A
85 °C