Diodes LMN200B01 - Manual (Page 4)

DS30651 Rev. 7 - 2 4 of 10 LMN200B01
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T
C
U
D
O
R
P
W
E
N
Electrical Characteristics:
N-MOSFET with Gate Pull-Down Resistor (Q2)
@ T
A
= 25
°
C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS V
(BR)DSS 60
 
V V
GS
= 0V, I
D
= 10
µ
A
Zero Gate Voltage Drain Current (Drain Leakage
Current)
I
DSS
 
1
µ
A V
GS
=0V, V
DS
= 60V
Gate-Body Leakage Current, Forward I GSSF
  0.95 mA V GS = 20V, V DS = 0V
Gate-Body Leakage Current, Reverse I
GSSR
 
-0.95 mA V
GS
= -20V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage)
V GS(th) 1 1.86 2.2 V V DS = V GS , I D = 0.25mA
Static Drain-Source On-State Voltage V DS(on)
 0.08 1.5
V
V
GS
= 5V, I
D
= 50mA

0.15 3.75 V
GS
= 10V, I
D
= 115mA
On-State Drain Current I
D(on) 500
 
mA
V GS = 10V,
V
DS
≥
2 V
DS(ON)
Static Drain-Source On Resistance R
DS(on)
 1.55 3
Ω
V GS = 5V, I D = 50mA

1.4 2 V
GS
= 10V, I
D
= 500mA
Forward Transconductance g
FS
80 240

mS
V
DS
≥
2 V
DS(ON)
, I
D
= 115 mA
80 350
 V
DS
≥ 2 V
DS(ON)
, I
D
= 200 mA
Gate Pull-Down Resistor, +/- 30% R3

37

K
Ω 
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
 
50 pF
V
DS
= -25V, V
GS
= 0V,
ƒ
= 1MHz
Output Capacitance C oss
  25 pF
Reverse Transfer Capacitance C
rss
 
5 pF
SWITCHING CHARACTERISTICS*
Turn-On Delay Time td
(on)
  20 ns V
DD
= 30V, V
GS
=10V,
I
D
= 200mA,
R
G
= 25 Ω , R
L
= 150 Ω Turn-Off Delay Time td
(off)
 
40 ns
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage V
SD
 0.88 1.5 V V
GS
= 0V, I
S
= 115 mA*
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
I
S
 
115 mA

Maximum Pulsed Drain-Source Diode Forward
Current
I
SM
  800 mA 
Typical Characteristics
0
50
25 50 75 100 125 150 175
P
,
P
O
W
E
R
D
IS
S
IP
A
T
IO
N
(
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 3, Max Power Dissipation vs Ambient Temperature
100
150
300
350
200
250
0
* Pulse Test: Pulse width, tp<300 µ S, Duty Cycle, d<=0.02.
Notes: 4. Short duration test pulse used to minimize self-heating effect.