Thermal characteristics – Diodes ZXTP19060CG User Manual
Page 3
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ZXTP19060CG
Issue 1- February 2008
3
www.zetex.com
© Zetex Semiconductors plc 2008
Thermal characteristics
100m
1
10
10m
100m
1
10
Si ngl e Pul s e. T
am
b
=25° C
See note (c )
V
CE(sat)
Li m i t
100µs
1m s
10m s
100m s
1s
DC
Safe Operating Area
-
I
C
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
-V
CE
Collector-Emitter Voltage (V)
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
See note (c )
See note (b)
See note (a)
Derating Curve
Temperature (°C)
M
a
x
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
100µ
1m
10m
100m
1
10
100
1k
0
10
20
30
40
See note (c )
T ransient T hermal Impedance
D=0.5
D=0.2
D=0.1
Si ngl e Pul s e
D=0.05
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
(
°
C
/
W
)
Pulse W idth (s)
100µ
1m
10m
100m
1
10
100
1k
1
10
100
Si ngl e Pul s e. T
am
b
=25° C
See note (c )
Pulse Pow er Dissipation
Pulse W idth (s)
M
a
x
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
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