Thermal characteristics – Diodes ZXTP19060CG User Manual

Page 3

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ZXTP19060CG

Issue 1- February 2008

3

www.zetex.com

© Zetex Semiconductors plc 2008

Thermal characteristics

100m

1

10

10m

100m

1

10

Si ngl e Pul s e. T

am

b

=25° C

See note (c )

V

CE(sat)

Li m i t

100µs

1m s

10m s

100m s

1s

DC

Safe Operating Area

-

I

C

C

o

l

l

e

c

t

o

r

C

u

r

r

e

n

t

(

A

)

-V

CE

Collector-Emitter Voltage (V)

0

20

40

60

80

100

120

140

160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

See note (c )

See note (b)

See note (a)

Derating Curve

Temperature (°C)

M

a

x

P

o

w

e

r

D

i

s

s

i

p

a

t

i

o

n

(

W

)

100µ

1m

10m

100m

1

10

100

1k

0

10

20

30

40

See note (c )

T ransient T hermal Impedance

D=0.5

D=0.2

D=0.1

Si ngl e Pul s e

D=0.05

T

h

e

r

m

a

l

R

e

s

i

s

t

a

n

c

e

(

°

C

/

W

)

Pulse W idth (s)

100µ

1m

10m

100m

1

10

100

1k

1

10

100

Si ngl e Pul s e. T

am

b

=25° C

See note (c )

Pulse Pow er Dissipation

Pulse W idth (s)

M

a

x

P

o

w

e

r

D

i

s

s

i

p

a

t

i

o

n

(

W

)

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