Typical characteristics – Diodes ZXTP19060CG User Manual

Page 5

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ZXTP19060CG

Issue 1- February 2008

5

www.zetex.com

© Zetex Semiconductors plc 2008

Typical characteristics

1m

10m

100m

1

10

10m

100m

1

10m

100m

1

10

0.0

0.1

0.2

0.3

1m

10m

100m

1

10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1m

10m

100m

1

10

0.2

0.4

0.6

0.8

1.0

1.2

1m

10m

100m

1

10

0.2

0.4

0.6

0.8

1.0

10m

100m

1

10

0

50

100

150

200

250

300

350

400

0

100

200

300

400

500

600

I

C

/I

B

=100

V

CE(SA

T)

v I

C

T am b=25° C

I

C

/I

B

=50

I

C

/I

B

=20

I

C

/I

B

=10

-

V

C

E

(

S

A

T

)

(

V

)

- I

C

Collector Current (A)

100° C

V

BE(SA

T)

v I

C

I

C

/I

B

=10

150° C

25° C

-55° C

-

V

C

E

(

S

A

T

)

(

V

)

- I

C

Collector Current (A)

150° C

h

FE

v I

C

V

CE

=2V

-55° C

25° C

100° C

N

o

r

m

a

l

i

s

e

d

G

a

i

n

- I

C

Collector Current (A)

150° C

25° C

V

CE(SA

T)

v I

C

I

C

/I

B

=10

100° C

-55° C

-

V

B

E

(

S

A

T

)

(

V

)

- I

C

Collector Current (A)

150° C

V

BE(ON)

v I

C

V

CE

=2V

100° C

25° C

-55° C

-

V

B

E

(

O

N

)

(

V

)

- I

C

Collector Current (A)

Capacitance v Voltage

f = 1MHz

Cobo

Ci bo

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

- Voltage(V)

T

yp

i

ca

l

G

a

i

n

(

h

F

E

)

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