Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP19060CG User Manual
Page 4
ZXTP19060CG
Issue 1- February 2008
4
www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
-60
-110
V
I
C
= -100
µ
A
Collector-Emitter
breakdown voltage
BV
CEO
-260
-90
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤
300µs; duty cycle
≤
2%.
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECX
-7
-8.4
V
I
E
= -100
µ
A, R
BC
< 1k
Ω
or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECO
-7
-8.8
V
I
E
= -100
µ
A
Emitter-Base breakdown
voltage
BV
EBO
-7
-8.4
V
I
E
= -100
µ
A
Collector-Base cut-off
current
I
CBO
<1
-50
-0.5
nA
µ
A
V
CB
= -60V
V
CB
= -60V, T
amb
=100°C
Emitter cut-off current
I
EBO
<1
-50
nA
V
EB
= -5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
-62
-145
-500
-105
-145
-300
-80
-205
-750
-165
-200
-500
mV
mV
mV
mV
mV
mV
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -1A, I
B
= -20mA
(*)
I
C
= -2A, I
B
= -40mA
(*)
I
C
= -2A, I
B
= -200mA
(*)
I
C
= -3A, I
B
= -300mA
(*)
I
C
= -5A, I
B
= -500mA
(*)
Base-Emitter saturation
voltage
V
BE(sat)
-975
-1050
mV
I
C
= -5A, I
B
= -500mA
(*)
Base-Emitter turn-on
voltage
V
BE(on)
-890
-1000
mV
I
C
= -5A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
200
160
20
330
260
40
500
I
C
= -100mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
I
C
= -5A, V
CE
= -2V
(*)
Transition frequency
f
T
180
MHz
I
C
= -50mA, V
CE
= -10V
f
= 50MHz
Input capacitance
C
ibo
280
400
pF
V
EB
= -0.5V, f
= 1MHz
(*)
Output capacitance
C
obo
29.5
40
pF
V
CB
= -10V, f
= 1MHz
(*)
Delay time
t
d
24.3
ns
I
C
= -500mA, V
CC
= -10V,
I
B1
= -I
B2
= -50mA
Rise time
t
r
13.2
ns
Storage time
t
s
456
ns
Fall time
t
f
68.2
ns