Diodes ZXTP2013G - Manual (Page 2)

ZXTP2013G
Da
tasheet Number: DS33714 Rev. 2 - 2
2 of 7
www.diodes.com
May 2013
© Diodes Incorporated
ZXTP2013G
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-140 V
Collector-Emitter Voltage V CEO
-100 V
Emitter-Base Voltage V
EBO
-7 V
Continuous Collector Current I
C
-5 A
Peak Pulse Current I
CM
-10 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Linear derating factor
P D
3.0
24
W
mW/°C
Power Dissipation (Note 6)
Linear derating factor
P
D
1.6
12.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5) R • JA
42 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R
• JA
78 °C/W
Thermal Resistance Junction to Lead (Note 7) R
• JL
10.48 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM • 400 V C
Notes: 5. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is surface mounted on 25mm x 25mm with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.