Zxtp2013g, Electrical characteristics, A product line of diodes incorporated – Diodes ZXTP2013G User Manual
Page 4
ZXTP2013G
Da
tasheet Number: DS33714 Rev. 2 - 2
4 of 7
May 2013
© Diodes Incorporated
ZXTP2013G
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-140
-160
—
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CER
-140
-160
—
V
I
C
= -1µA,
R
B
•
1k•
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-100
-115
—
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7
-8.1
—
V
I
E
= -100µA
Collector Cutoff Current
I
CBO
—
—
< 1
—
-20
-500
nA
nA
V
CB
= -100V
V
CB
= -100V, T
A
= +100°C
Collector Cutoff Current
I
CER
R
•
1k•
—
—
< 1
—
-20
-500
nA
nA
V
CB
= -100V
V
CB
= -100V, T
A
= +100°C
Emitter Cutoff Current
I
EBO
—
< 1
-10
nA
V
EB
= -6V
DC Current Transfer Static Ratio (Note 9)
h
FE
100
250
—
—
I
C
= -10mA, V
CE
= -1V
100
200
300
I
C
= -1A, V
CE
= -1V
25
50
—
I
C
= -3A, V
CE
= -1V
15
30
—
I
C
= -4A, V
CE
= -1V
—
5
—
I
C
= -10A, V
CE
= -1V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(SAT)
—
-20
-30
mV
I
C
= -100mA, I
B
= -10mA
—
-70
-90
I
C
= -1A, I
B
= -100mA
—
-120
-150
I
C
= -2A, I
B
= -200mA
—
-240
-340
I
C
= -4A, I
B
= -400mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(SAT)
—
-985
-1100
mV
I
C
= -4A, I
B
= -400mA
Base-Emitter Turn-on Voltage (Note 9)
V
BE(ON)
—
-920
-1050
mV
I
C
= -4A, V
CE
= -1V
Transitional Frequency (Note 9)
f
T
—
125
—
MHz
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
Output Capacitance
C
obo
—
42
—
pF
V
CB
= -10V, f = 1MHz
Switching Time
t
ON
—
42
—
ns
V
CC
= -50V, I
C
= -1A,
I
B1
= -I
B2
=
-100mA
t
OFF
—
540
—
Note:
9. Measured under pulsed conditions. Pulse width • 300µs. Duty cycle • 2%.