Linear burst address table (mode = gnd), Zz mode electrical characteristics, Truth table – Cypress CY7C1462AV33 User Manual

Page 8

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CY7C1460AV33
CY7C1462AV33
CY7C1464AV33

Document #: 38-05353 Rev. *D

Page 8 of 27

counter is incremented. The correct BW (BW

a,b,c,d,e,f,g,h

for

CY7C1464AV33, BW

a,b,c,d

for CY7C1460AV33 and BW

a,b

for

CY7C1462AV33) inputs must be driven in each cycle of the
burst write in order to write the correct bytes of data.

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE

1

, CE

2

, and CE

3

, must remain inactive

for the duration of t

ZZREC

after the ZZ input returns LOW.

Interleaved Burst Address Table
(MODE = Floating or V

DD

)

First

Address

Second

Address

Third

Address

Fourth

Address

A1,A0

A1,A0

A1,A0

A1,A0

00

01

10

11

01

00

11

10

10

11

00

01

11

10

01

00

Linear Burst Address Table (MODE = GND)

First

Address

Second

Address

Third

Address

Fourth

Address

A1,A0

A1,A0

A1,A0

A1,A0

00

01

10

11

01

10

11

00

10

11

00

01

11

00

01

10

ZZ Mode Electrical Characteristics

Parameter

Description

Test Conditions

Min.

Max.

Unit

I

DDZZ

Sleep mode standby current

ZZ

> V

DD

− 0.2V

100

mA

t

ZZS

Device operation to ZZ

ZZ

> V

DD

− 0.2V

2t

CYC

ns

t

ZZREC

ZZ recovery time

ZZ

< 0.2V

2t

CYC

ns

t

ZZI

ZZ active to sleep current

This parameter is sampled

2t

CYC

ns

t

RZZI

ZZ Inactive to exit sleep current

This parameter is sampled

0

ns

Truth Table

[1, 2, 3, 4, 5, 6, 7]

Operation

Address

Used

CE

ZZ

ADV/LD

WE

BW

x

OE

CEN

CLK

DQ

Deselect Cycle

None

H

L

L

X

X

X

L

L-H

Tri-State

Continue
Deselect Cycle

None

X

L

H

X

X

X

L

L-H

Tri-State

Read Cycle
(Begin Burst)

External

L

L

L

H

X

L

L

L-H

Data Out (Q)

Read Cycle
(Continue Burst)

Next

X

L

H

X

X

L

L

L-H

Data Out (Q)

NOP/Dummy Read
(Begin Burst)

External

L

L

L

H

X

H

L

L-H

Tri-State

Dummy Read
(Continue Burst)

Next

X

L

H

X

X

H

L

L-H

Tri-State

Notes:

1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for ALL Chip Enables active. BWx = L signifies at least one Byte Write Select is active, BWx =

Valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.

2. Write is defined by WE and BW

X

. See Write Cycle Description table for details.

3. When a write cycle is detected, all I/Os are tri-stated, even during byte writes.
4. The DQ and DQP pins are controlled by the current cycle and the OE signal.
5. CEN = H inserts wait states.
6. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles.During a read cycle DQ

s

and DQP

X

= Tri-state when OE

is inactive or when the device is deselected, and DQ

s

=data when OE is active.

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