VEGA VEGASWING 66 - transistor (NPN-PNP) With SIL qualification - Manual (Page 33)

33
9 Supplement
VEGASWING 66 • - transistor (NPN/PNP)
44951-EN-130805
Influence of the product density on the switching point
1
2
4
3
5
6
1,2
(0,043)
1
(0,036)
0,8
(0,029)
0,6
(0,022)
1,4
(0,051)
1,6
(0,058)
1,8
(0,065)
2
(0,072)
2,2
(0,079)
2,4
(0,087)
10 (0.39")
0
0,4
(0,014)
8 (0.31")
6 (0.24")
4 (0.16")
2 (0.08")
-2 (-0.08")
-4 (-0.16")
-6 (-0.24")
-8 (-0.31")
-10 (-0.39")
mm
Fig. 38: Influence of the product density on the switching point
1 Shifting of the switching point in mm (in)
2 Product density in g/cm³ (lb/in³)
3 Switch position 0.5 g/cm³ (0.018 lb/in³)
4 Switch position 0.7 g/cm³ (0.025 lb/in³)
5 Switching point at reference conditions (notch)
6 Tuning fork
Influence of the process pressure to the switching point
1
2
3
4
20
(290)
60
(870)
40
(580)
80
(1160)
100
(1450)
10 (0.39")
8 (0.31")
6 (0.24")
4 (0.16")
2 (0.08")
-2 (-0.08")
-4 (-0.16")
-6 (-0.24")
-8 (-0.31")
-10 (-0.39")
mm
0
120
(1740)
140
(2030)
160
(2320)
Fig. 39: Influence of the process pressure to the switching point
1 Shifting of the switching point in mm (in)
2 Process pressure in bar (psig)
3 Switching point at reference conditions (notch)
4 Tuning fork
Repeatability 0.1 mm (0.004 in)
Hysteresis approx. 2 mm (0.08 in) with vertical installation
Switching delay approx. 1 s (on/off)