C&H Technology VS-EMG050J60N - Manual (Page 4)

VS-EMG050J60N
www.vishay.com
Vishay Semiconductors
Revision: 09-Dec-11 3 Document Number: 93495
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Note
(1) Energy losses include “tail” and diode reverse recovery.
Turn-on switching loss E
ON
I
C
= 50 A
V
CC
= 400 V
V
GE
= 15 V
R
g
= 4.7

L = 500 μH
T
J
= 125 °C (1)
- 0.182 -
mJ Turn-off switching loss E
OFF
- 0.615 -
Total switching loss E
TOT
- 0.797 -
Turn-on delay time t
d(on)
- 198 -
ns
Rise time t
r
- 29 -
Turn-off delay time t
d(off)
- 227 -
Fall time t
f
- 75 -
Input capacitance C
ies V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
- 9500 -
pF Output capacitance C
oes
- 780 -
Reverse transfer capacitance C
res
- 116 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 150 A
V
CC
= 400 V, V
P
= 600 V
R
g
= 22
, V
GE
= 15 V to 0 V
Fullsquare
ANTIPARALLEL DIODE D1 - D2
Diode reverse recovery time t
rr V
R
= 200 V
I
F
= 20 A
dl/dt = 500 A/μs, T
J
= 25 °C
- 65 110 ns
Diode peak reverse current I
rr
- 11 15 A
Diode reverse charge Q
rr
- 350 825 nC
Diode reverse recovery time t
rr V
R
= 200 V
I
F
= 20 A
dl/dt = 500 A/μs, T
J
= 125 °C
- 83 130 ns
Diode peak reverse current I
rr
- 15 20 A
Diode reverse charge Q
rr
- 587 1300 nC
PFC DIODE D3 - D4
Diode reverse recovery time t
rr V
R
= 200 V
I
F
= 10 A
dl/dt = 200 A/μs, T
J
= 25 °C
- 43 - ns
Diode peak reverse current I
rr
- 2.13 - A
Diode reverse charge Q
rr
- 45.5 - nC
Diode reverse recovery time t
rr V
R
= 200 V
I
F
= 10 A
dl/dt = 200 A/μs, T
J
= 125 °C
- 44 - ns
Diode peak reverse current I
rr
- 2.14 - A
Diode reverse charge Q
rr
- 46.5 - nC
THERMISTOR ELECTRICAL CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance
R
25
4500 5000 5500

R
100
T
J
= 100 °C 468 493 518
B value B T
J
= 25 °C/T
J
= 50 °C 3206 3375 3544 K
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS