Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-EMG050J60N User Manual
Page 5
VS-EMG050J60N
www.vishay.com
Vishay Semiconductors
Revision: 09-Dec-11
4
Document Number: 93495
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Note
(1)
Mounting surface flat, smooth, and greased
Fig. 1 - Typical PFC IGBT Output Characteristics
Fig. 2 - Typical PFC IGBT Output Characteristics
Fig. 3 - Maximum DC PFC IGBT Collector Current vs.
Case Temperature per Junction
Fig. 4 - Typical PFC IGBT Collector to Emitter Voltage vs.
Junction Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP. MAX. UNITS
Q1 - Q2 PFC IGBT - Junction to case thermal resistance (per switch)
R
thJC
-
-
0.37
°C/W
D1 - D2 AP diode - Junction to case thermal resistance (per diode)
-
-
4.29
D3 - D4 PFC diode - Junction to case thermal resistance (per diode)
-
-
1.69
Q1 - Q2 PFC IGBT - Case to sink thermal resistance (per switch)
R
thCS
(1)
-
0.31
-
D1 - D2 AP diode - Case to sink thermal resistance (per diode)
-
3.66
-
D3 - D4 PFC diode - Case to sink thermal resistance (per diode)
-
1.1
-
Mounting torque (M4)
-
2
3
Nm
Weight
-
39
-
g
I
C
(A)
V
CE
(V)
0
1.5
3.0
1.0
2.5
0.5
2.0
3.5
0
93495_01
100
20
50
80
40
70
90
10
30
60
T
J
= 125 °C
T
J
= 150 °C
T
J
= 25 °C
V
GE
= 15 V
I
C
(A)
V
CE
(V)
0
1.5
2.5
3.0
3.5
0.5
1.0
2.0
4.0
0
93495_02
100
10
60
40
20
80
50
30
90
70
V
GE
= 8 V
V
GE
= 10 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
T
J
= 125 °C
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
80
60
40
20
100
0
100
160
0
40
60
140
80
120
20
93495_03
DC
V
CE
(V)
T
J
(°C)
10
160
60
110
0.5
1.0
1.5
2.0
2.5
3.0
3.5
93495_04
4.0
100 A
50 A
27 A
V
GE
= 15 V