Vishay semiconductors – C&H Technology VS-EMG050J60N User Manual

Page 8

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VS-EMG050J60N

www.vishay.com

Vishay Semiconductors

Revision: 09-Dec-11

7

Document Number: 93495

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Fig. 17 - Typical Antiparallel Reverse Recovery Current vs. dI

F

/dt

V

R

= 200 V, I

F

= 20 A

Fig. 18 - Typical Antiparallel Reverse Recovery Charge vs. dI

F

/dt

V

R

= 200 V, I

F

= 20 A

Fig. 19 - Typical PFC Diode Reverse Recovery Time vs. dI

F

/dt

V

R

= 200 V, I

F

= 10 A

Fig. 20 - Typical PFC Diode Reverse Recovery Current vs. dI

F

/dt

V

R

= 200 V, I

F

= 10 A

Fig. 21 - Typical PFC Diode Reverse Recovery Charge vs. dI

F

/dt

V

R

= 200 V, I

F

= 10 A

I

rr

(A)

dI

F

/dt (A/μs)

100

200

300

400

93495_17

500

3

17

9

13

5

11

15

7

125 °C

25 °C

Q

rr

(nC)

dI

F

/dt (A/μs)

100

200

300

400

93495_18

500

200

600

300

400

500

350

450

550

250

125 °C

25 °C

t

rr

(ns)

dI

F

/dt (A/μs)

100

200

300

400

93495_19

500

10

70

40

60

30

20

50

125 °C

I

rr

(A)

dI

F

/dt (A/μs)

100

200

300

400

93495_20

500

0.5

4.5

3.5

2.5

1.5

125 °C

Q

rr

(nC)

dI

F

/dt (A/μs)

100

200

400

300

93495_21

500

36

50

48

40

44

42

46

38

125 °C

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