Vishay semiconductors – C&H Technology VS-EMG050J60N User Manual
Page 7
VS-EMG050J60N
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Vishay Semiconductors
Revision: 09-Dec-11
6
Document Number: 93495
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Fig. 11 - Typical PFC Diode Forward Characteristics
Fig. 12 - Maximum DC PFC Diode Forward Current vs.
Case Temperature per Junction
Fig. 13 - Typical PFC Diode Reverse Leakage Current
Fig. 14 - Typical PFC IGBT Energy Loss vs. I
C
(with Freewheeling D3 - D4 PFC Diode)
T
J
= 125 °C, V
CC
= 400 V, R
g
= 4.7
, V
GE
= 15 V, L = 500 μH
Fig. 15 - Typical PFC IGBT Switching Time vs. I
C
(with Freewheeling D3 - D4 PFC Diode)
T
J
= 125 °C, V
CC
= 400 V, R
g
= 4.7
, V
GE
= 15 V, L = 500 μH
Fig. 16 - Typical Antiparallel Reverse Recovery Time vs. dI
F
/dt
V
R
= 200 V, I
F
= 20 A
I
F
(A)
V
FM
(V)
0
4.0
0.5
1.0
1.5
2.0
3.0
2.5
3.5
0
93495_11
50
40
30
20
10
T
J
= 25 °C
T
J
= 125 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
20
15
10
5
25
30
0
100
160
0
40
60
140
80
120
20
93495_12
DC
I
R
(mA)
V
R
(V)
100
200
300
400
500
600
0.00001
0.0001
0.001
0.01
0.1
1
93495_13
125 °C
25 °C
Energy (mJ)
I
C
(A)
0
20
60
80
40
100
0
93495_14
1.8
0.6
1.2
1.0
0.8
1.4
1.6
0.4
0.2
E
on
E
off
S
witching Time (ns)
I
C
(A)
0
20
80
60
40
100
10
93495_15
1000
100
t
d(off)
t
d(on)
t
f
t
r
t
rr
(ns)
dI
F
/dt (A/μs)
100
200
300
400
93495_16
500
50
150
130
70
90
110
125 °C
25 °C