Vishay semiconductors – C&H Technology VS-EMG050J60N User Manual
Page 6
VS-EMG050J60N
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Vishay Semiconductors
Revision: 09-Dec-11
5
Document Number: 93495
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Fig. 5 - Typical PFC IGBT Transfer Characteristics
Fig. 6 - Typical PFC IGBT Gate Threshold Voltage
Fig. 7 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V, R
g
= 22
Fig. 8 - Typical PFC IGBT Zero Gate Voltage Collector Current
Fig. 9 - Typical Antiparallel Diode Forward Characteristics
Fig. 10 - Maximum DC Antiparallel Diode Forward Current vs.
Case Temperature per Junction
I
CE
(A)
V
GE
(V)
3
8
7
4
5
6
0
93495_05
100
30
40
10
50
60
20
80
90
70
T
J
= 25 °C
V
CE
= 20 V
T
J
= 125 °C
V
geth
(V)
I
C
(mA)
0
1.0
0.2
0.1
0.3
0.5
0.7
0.9
0.4
0.6
0.8
2.0
2.5
3.0
3.5
4.0
93495_06
4.5
T
J
= 25 °C
T
J
= 125 °C
I
C
(A)
V
CE
(V)
1
10
100
1000
0.01
0.1
1
93495_07
1000
10
100
I
CE
S
(mA)
V
CES
(V)
100
600
200
300
400
500
0.0001
93495_08
1
0.1
0.01
0.001
125 °C
25 °C
I
F
(A)
V
FM
(V)
0
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
93495_09
100
40
30
80
20
60
90
70
10
50
T
J
= 25 °C
T
J
= 125 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
10
6
4
2
14
12
8
16
18
0
100
160
0
40
60
140
80
120
20
93495_10
DC