NXP Semiconductors PIP3210-R - Manual (Page 10)

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
Fig.22. Typical battery to ground clamping voltage.
V
BG
= f(T
j
); parameter I
G
Fig.23. Typical battery to load clamping voltage.
V
BL
= f(T
j
); parameter I
L
; condition I
G
= 10mA
Fig.24. Typical negative load clamping.
I
L
= f(V
LG
); conditions V
IG
= = 0V, T
j
= 25˚C
Fig.25. Typical negative load clamping voltage.
V
LG
= f(T
j
); parameter I
L
; condition V
IG
= = 0V
Fig.26. Typical reverse diode characteristic.
I
L
= f(V
BL
); conditions V
IG
= 0 V, T
j
= 25 ˚C
Fig.27. Typical overload characteristic, T
mb
= 25 ˚C.
I
L
= f(V
BL
); condition V
BG
= 16 V; parameter t
p
50
55
60
65
-50 0 50 100 150 200
T
j
/ O C
V
BG
/ V
I
G
=
1 mA
200 mA
-30
-25
-20
-15
-10
-50 0 50 100 150 200
T
j
/ O C
I
L
=
10 mA
10 A
V
LG
/ V
50
55
60
65
-50 0 50 100 150 200
T
j
/ O C
I
L
=
1 mA
600 mA
V
BL
/ V I
L
/ A
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
V
BL
/ V
I
L
/ A
0
5
10
-30 -25 -20 -15 -10
V
LG
/ V
I
L
/ A
0
5
10
15
20
25
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18 20
V
BL
/ V
Short circuit trip = 150us
V
BL(TO)
typ.
current limiting
September 2001 10 Rev 1.000