Topfet high side switch pip3210-r, Philips semiconductors product specification, Fig.28. short circuit load threshold voltage. v – NXP Semiconductors PIP3210-R User Manual
Page 11: Conditions -40˚c ≤ t, 25 ˚c c, Conditions f = 1 mhz, v, Conditions i, 0 a, t, 25 ˚c fig.31. typical overload current, v, 8v. i
Philips Semiconductors
Product specification
TOPFET high side switch
PIP3210-R
Fig.28. Short circuit load threshold voltage.
V
BL(TO)
= f(V
BG
); conditions -40˚C
≤
T
mb
≤
150˚C
Fig.29. Typical output capacitance. T
mb
= 25 ˚C
C
bl
= f(V
BL
); conditions f = 1 MHz, V
IG
= 0 V
Fig.30. Typical reverse battery characteristic.
I
G
= f(V
BG
); conditions I
L
= 0 A, T
j
= 25 ˚C
Fig.31. Typical overload current, V
BL
= 8V.
I
L
= f(T
j
); parameter V
BG
= 13V;t
p
= 300
µ
s
Fig.32. Typical short circuit load threshold voltage.
V
BL(TO)
= f(T
j
); condition V
BG
= 16 V
Fig.33. Transient thermal impedance.
Z
th
j-mb
= f(t); parameter D = t
p
/T
0
5
10
15
20
25
30
35
0
10
20
30
40
50
VBG / V
VBL(TO)
/ V
min.
max.
typ. 25˚C
BUK215-50Y
30
35
40
45
50
-50
0
50
100
150
200
T
j
/
O
C
I
L(lim)
/ A
0
10
20
30
40
50
10 nF
1nF
100pF
C
BL
V
BL
/ V
V
BL(TO)
/ V
10.0
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-50
0
50
100
150
200
T
j
/
O
C
I
G
/ mA
-200
-150
-100
-50
0
-20
-15
-10
-5
0
V
BG
/ V
D =
t
p
t
p
T
T
P
t
D
Zth j-mb ( K / W )
t / s
1e+02
1e-01
1e-03
1e-05
1e-07
1e+01
1e-03
1e-02
1e-01
1e+00
D =
0.5
0.2
0.1
0.05
0.02
0
September 2001
11
Rev 1.000