Topfet high side switch pip3210-r, Philips semiconductors product specification, 300 µ s. r – NXP Semiconductors PIP3210-R User Manual
Page 7: Parameter v, Condition i, 10 a fig.6. typical on-state characteristics, t, 25 ˚c. i, Fig.8. typical on-state resistance,t, 25 ˚c. r, 10 a; t
Philips Semiconductors
Product specification
TOPFET high side switch
PIP3210-R
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Typical on-state resistance, t
p
= 300
µ
s.
R
ON
= f(T
j
); parameter V
BG
; condition I
L
= 10 A
Fig.6. Typical on-state characteristics, T
j
= 25 ˚C.
I
L
= f(T
j
); parameter V
BG
; t
p
= 250
µ
s
Fig.7. Typical supply characteristics, 25 ˚C.
I
G
= f(V
BG
); parameter V
IG
Fig.8. Typical on-state resistance,T
j
= 25 ˚C.
R
ON
= f(V
BG
); condition I
L
= 10 A; t
p
= 300
µ
s
Fig.9. Typical operating supply current.
I
G
= f(T
j
); parameters I
L
, V
BG
; condition V
IG
= 5 V
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
LOAD
VBL
0
1
2
3
4
5
0
10
20
30
40
50
60
70
V
BG
/ V
I
BG(ON)
/ mA
OPERATING V
IG
= 5 V
CLAMPING
OVERVOLTAGE
SHUTDOWN
UNDERVOLTAGE
SHUTDOWN
QUIESCENT V
IG
= 0 V
0
20
40
60
80
-50
0
50
100
150
200
T
j
/
O
C
R
ON
/ mOhm
V
BG
= 6 V
9 V =< V
BG
=< 35 V
typ
.
R
ON
/ mOhm
20
22
24
26
28
30
32
34
36
38
40
1
10
100
V
BG
/ V
R
ON
max
0
10
20
30
40
50
0
1
2
V
BL
/ V
I
L
/ A
5
6
7
V
BG
/ V
> = 8
0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
200
T
j
/
O
C
I
G
/ mA
lL > IL(TO)
V
BG
= 50 V
9 V <= V
BG
<= 35 V
typ.
l
L
= 0 A
l
L
> I
L(TO)
September 2001
7
Rev 1.000