NXP Semiconductors PIP3210-R - Manual (Page 3)

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ T
mb
≤ 150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
V
BG
Battery to ground I
G
= 1 mA 50 55 65 V
V
BL
Battery to load I
L
= I
G
= 1 mA 50 55 65 V
-V
LG
Negative load to ground I
L
= 10 mA 18 23 28 V
-V
LG
Negative load voltage 1 I
L
= 10 A; t
p
= 300 µ s 20 25 30 V
Supply voltage battery to ground
V
BG
Operating range 2 5.5 - 35 V
Currents 9 V
≤
V
BG
≤
16 V
I
B
Quiescent current 3 V
LG
= 0 V - - 20 µ A
T
mb
= 25˚C - 0.1 2
µ
A
I
L
Off-state load current 4 V
BL
= V
BG
- - 20
µ
A
T
mb
= 25˚C - 0.1 1
µ
A
I
G
Operating current 5 I
L
= 0 A - 2 4 mA
I
L
Nominal load current 6 V
BL
= 0.5 V T
mb
= 85˚C 9 - - A
Resistances V
BG
I
L
t
p
7 T
mb
R
ON
On-state resistance 9 to 35 V 10 A 300 µ s 25˚C - 28 38 m Ω
150˚C - - 70 m
Ω
R
ON
On-state resistance 6 V 10 A 300
µ
s 25˚C - 36 48 m
Ω
150˚C - - 88 m
Ω
R
G
Internal ground resistance I
G
= 10 mA 95 150 190
Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only.
7 The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
September 2001 3 Rev 1.000