Absolute maximum ratings, Dc electrical characteristics – National Instruments HPC167064 User Manual
Page 2
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Total Allowable Source or Sink Current
100 mA
Storage Temperature Range
b
65 C to a150 C
Lead Temperature (Soldering 10 sec )
300 C
V
CC
with Respect to GND
b
0 5V to 7 0V
All Other Pins
(V
CC
a
0 5V) to (GND b 0 5V)
Note
Absolute maximum ratings indicate limits beyond
which damage to the device may occur DC and AC electri-
cal specifications are not ensured when operating the de-
vice at absolute maximum ratings
DC Electrical Characteristics
V
CC
e
5 0V
g
5% unless otherwise specified T
A
e
b
55 C to a125 C for HPC167064 and V
CC
e
5 0V
g
10% unless
otherwise specified T
A
e
0 C to 70 C for HPC467064
Symbol
Parameter
Test Conditions
Min
Max
Units
I
CC1
Supply Current
V
CC
e
max f
IN
e
30 0 MHz (Note 1)
85
mA
V
CC
e
max f
IN
e
20 0 MHz (Note 1)
70
mA
V
CC
e
max f
IN
e
2 0 MHz (Note 1)
40
mA
I
CC2
IDLE Mode Current
V
CC
e
max f
IN
e
30 0 MHz (Note 1)
6 0
mA
V
CC
e
max f
IN
e
20 0 MHz (Note 1)
4 5
mA
V
CC
e
max f
IN
e
2 0 MHz (Note 1)
1
mA
I
CC3
HALT Mode Current
V
CC
e
max f
IN
e
0 kHz (Note 1)
400
m
A
V
CC
e
2 5V f
IN
e
0 kHz (Note 1)
100
m
A
INPUT VOLTAGE LEVELS FOR SCHMITT TRIGGERED INPUTS RESET NMI AND WO AND ALSO CKI
V
IH1
Logic High
0 9 V
CC
V
V
IL1
Logic Low
0 1 V
CC
V
ALL OTHER INPUTS
V
IH2
Logic High
0 7 V
CC
V
V
IL2
Logic Low
0 2 V
CC
V
I
LI1
Input Leakage Current
V
IN
e
0 and V
IN
e
V
CC
(Note 4)
g
2
m
A
I
LI2
Input Leakage Current RDY HLD EXUI
V
IN
e
0
b
3
b
50
m
A
I
LI3
Input Leakage Current B12
RESET e 0 V
IN
e
V
CC
0 5
7
m
A
I
LI4
Input Leakage Current EXM
V
IN
e
0 and V
IN
e
V
CC
(Note 4)
g
10
m
A
C
I
Input Capacitance
(Note 2)
10
pF
C
IO
I O Capacitance
(Note 2)
20
pF
OUTPUT VOLTAGE LEVELS
V
OH1
Logic High (CMOS)
I
OH
e b
10 mA (Note 2)
V
CC
b
0 1
0 1
V
V
OL1
Logic Low (CMOS)
I
OH
e
10 mA (Note 2)
V
OH2
Port A B Drive CK2
I
OH
e b
7 mA
2 4
0 4
V
V
OL2
(A0 – A15 B10 B11 B12 B15)
I
OL
e
3 mA
V
OH3
Other Port Pin Drive WO (open drain)
I
OH
e b
1 6 mA (except WO)
2 4
0 4
V
V
OL3
(B0 – B9 B13 B14 P0 – P3)
I
OL
e
0 5 mA
V
OH4
ST1 and ST2 Drive
I
OH
e b
6 mA
2 4
0 4
V
V
OL4
I
OL
e
1 6 mA
V
OH5
Port A B Drive (A0 – 15 B10 B11 B12 B15)
I
OH
e b
1 mA
2 4
0 4
V
V
OL5
when used as External Address Data Bus
I
OL
e
3 mA
V
RAM
RAM Keep-Alive Voltage
(Note 3)
2 5
V
CC
V
I
OZ
TRI-STATE Leakage Current
V
IN
e
0 and V
IN
e
V
CC
g
5
m
A
Note 1
I
CC1
I
CC2
I
CC3
measured with no external drive (I
OH
and I
OL
e
0 I
IH
I
IL
e
0 and EXM
e
V
CC
) I
CC1
is measured with RESET
e
GND I
CC3
is measured
with NMI
e
V
CC
CKI driven to V
IH1
and V
IL1
with rise and fall times less than 10 ns
Note 2
This is guaranteed by design and not tested
Note 3
Test duration is 100 ms
Note 4
The EPROM mode of operation for this device requires high voltage input on pins EXM V
PP
I3 I4 I5 I6 and I7 This will increase the input leakage current
above the normal specification when driven to voltages greater than V
CC
a
0 3V
See NORMAL RUNNING MODE
2