Electrical characteristics – q1 (npn transistor) – Diodes ZXTC2063E6 User Manual
Page 4
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
4 of 9
November 2012
© Diodes Incorporated
ZXTC2063E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
130 170
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 12)
BV
CEO
40 63
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
7 8.3
⎯
V
I
E
= 100
μA, I
C
= 0
Emitter-collector breakdown voltage (reverse blocking)
BV
ECX
6 7.4
⎯
V
I
E
=100µA, R
BC
< 1k
Ω or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown voltage (base open)
BV
ECO
6 7.4
⎯
V
I
E
= 100µA
Collector Cutoff Current
I
CBO
⎯
<1
50
20
nA
μA
V
CB
= 100V
V
CB
= 100V, T
A
= +100°C
Collector Cutoff Current
I
EBO
⎯
<1 50 nA
V
EB
= 5.6V
ON CHARACTERISTICS (Note 12)
DC Current Gain
h
FE
300
280
40
450
400
60
900
⎯
I
C
= 10mA, V
CE
= 2V
I
C
= 1.0A, V
CE
= 2V
I
C
= 3.5A, V
CE
= 2V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
50
85
150
135
60
110
220
195
mV
I
C
= 1.0A, I
B
= 100mA
I
C
= 1.0A, I
B
= 20mA
I
C
= 2.0A, I
B
= 40mA
I
C
= 3.5A, I
B
= 350mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
960
1050 mV
I
C
= 3.5A, I
B
= 350mA
Base-Emitter Turn-On Voltage
V
BE(on)
⎯
860 950 mV
I
C
= 3.5A, V
CE
= 2V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
12 20 pF
V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
⎯
190
⎯
MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
Delay Time
t
d
⎯
64
⎯
ns
V
CC
= 10V, I
C
= 1A, I
B1
= I
B2
= 10mA
Rise Time
t
r
⎯
108
⎯
ns
Storage Time
t
s
⎯
428
⎯
ns
Fall Time
t
f
⎯
130
⎯
ns
Notes:
12. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.