Diodes ZXTC2063E6 User Manual
Page 7
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
7 of 9
November 2012
© Diodes Incorporated
ZXTC2063E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Typical Electrical Characteristics – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
1m
10m
100m
1
10
10m
100m
1
10m
100m
1
0.0
0.1
0.2
0.3
0.4
1m
10m
100m
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1m
10m
100m
1
10
0.4
0.6
0.8
1.0
1m
10m
100m
1
10
0.4
0.6
0.8
1.0
1.2
0
100
200
300
400
500
600
700
800
I
C
/I
B
=100
V
CE(SAT)
v I
C
Tamb=25°C
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
- V
C
E(
SAT
)
(V
)
- I
C
Collector Current (A)
100°C
V
BE(SAT)
v I
C
I
C
/I
B
=10
150°C
25°C
-55°C
- V
C
E(
SAT
)
(V
)
- I
C
Collector Current (A)
150°C
h
FE
v I
C
V
CE
=2V
-55°C
25°C
100°C
Norm
al
is
ed G
a
in
- I
C
Collector Current (A)
150°C
25°C
V
CE(SAT)
v I
C
I
C
/I
B
=10
100°C
-55°C
- V
BE(
SAT
)
(V
)
- I
C
Collector Current (A)
150°C
V
BE(ON)
v I
C
V
CE
=2V
100°C
25°C
-55°C
- V
BE(
O
N
)
(V
)
- I
C
Collector Current (A)
Ty
p
ic
a
l Gain (
h
FE
)