Electrical characteristics – q2 (pnp transistor) – Diodes ZXTC2063E6 User Manual
Page 5
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
5 of 9
November 2012
© Diodes Incorporated
ZXTC2063E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-45 -80
⎯
V
I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 12)
BV
CEO
-40 -65
⎯
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.3
⎯
V
I
E
= -100
μA, I
C
= 0
Emitter-collector breakdown voltage (reverse blocking)
BV
ECX
-6 -7.4
⎯
V
-I
E
= 100µA, R
BC
< 1k
Ω or
0.25V < V
BC
< -0.25V
Emitter-collector breakdown voltage (base open)
BV
ECO
-3 -8.7
⎯
V
I
E
= -100µA
Collector Cutoff Current
I
CBO
⎯
⎯
<1
-50
-20
nA
μA
V
CB
= -36V
V
CB
= -36V, T
A
= +100°C
Collector Cutoff Current
I
EBO
⎯
<1 -50 nA
V
EB
= -5.6V
ON CHARACTERISTICS (Note 12)
DC Current Gain
h
FE
300
200
20
450
280
50
900
⎯
⎯
⎯
I
C
= -10mA, V
CE
= -2V
I
C
= -1.0A, V
CE
= -2V
I
C
= -3.0A, V
CE
= -2V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
⎯
⎯
-70
-195
-175
-90
-290
-260
mV
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, I
B
= -20mA
I
C
= -3.0A, I
B
= -300mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
-935
-1000 mV
I
C
= -3.0A, I
B
= -300mA
Base-Emitter Turn-On Voltage
V
BE(on)
⎯
-855 -950 mV I
C
= -3.0A, V
CE
= -2V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
17 25 pF
V
CB
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
⎯
270
⎯
MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
Delay Time
t
d
⎯
57
⎯
ns
V
CC
= -10V, I
C
= -1A, I
B1
= I
B2
= -10mA
Rise Time
t
r
⎯
69
⎯
ns
Storage Time
t
s
⎯
154
⎯
ns
Fall Time
t
f
⎯
60
⎯
ns
Notes:
12. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.