V ) i, Collector current (a), No rm al is ed g a in i – Diodes ZXTC2063E6 User Manual
Page 6
ZXTC2063E6
Document Number: DS33648 Rev: 3 - 2
6 of 9
November 2012
© Diodes Incorporated
ZXTC2063E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Typical Electrical Characteristics – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
1m
10m
100m
1
10
1m
10m
100m
1
10m
100m
1
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1m
10m
100m
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1m
10m
100m
1
10
0.4
0.6
0.8
1.0
1.2
1m
10m
100m
1
10
0.2
0.4
0.6
0.8
1.0
0
75
150
225
300
375
450
525
600
675
750
825
I
C
/I
B
=100
V
CE(SAT)
v I
C
Tamb=25°C
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
V
C
E(
SAT
)
(V
)
I
C
Collector Current (A)
150°C
V
BE(SAT)
v I
C
I
C
/I
B
=10
100°C
25°C
-55°C
V
C
E(
SAT
)
(V
)
I
C
Collector Current (A)
150°C
h
FE
v I
C
V
CE
=2V
-55°C
25°C
100°C
No
rm
al
is
ed
G
a
in
I
C
Collector Current (A)
150°C
25°C
V
CE(SAT)
v I
C
I
C
/I
B
=10
100°C
-55°C
V
BE(
SA
T
)
(V
)
I
C
Collector Current (A)
150°C
V
BE(ON)
v I
C
V
CE
=2V
100°C
25°C
-55°C
V
BE
(O
N
)
(V
)
I
C
Collector Current (A)
Ty
p
ic
a
l G
a
in
(
h
FE
)