Diodes ZXMHC10A07T8 - Manual (Page 2)

ZXMHC10A07T8
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) (d) R ⍜JA 94.5 °C/W
Junction to Ambient
(b) (d)
R ⍜JA 73.3 °C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with
the heat sink split into two equal areas one for each drain connection.
(b) For a device surface mounted on FR4 PCB measured at t Յ 10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, D= 0.02, pulse width = 300 ␮s - pulse width limited by maximum junction temperature.
Refer to transiennt thermal impedance graph.
(d) For device with one active die.
THERMAL RESISTANCE
PARAMETER SYMBOL N-channel P-channel UNIT
Drain-Source Voltage V
DSS
100 -100 V
Gate-Source Voltage V
GS
Ϯ20 Ϯ20 V
Continuous Drain Current @ V
GS
=10V; T
A
=25°C (b) (d)
@ V
GS
=10V; T
A
=70°C (b) (d)
@ V
GS
=10V; T
A
=25°C
(a) (d)
I
D
1.1
0.9
1.0
-0.9
-0.8
-0.8
A
A
A
Pulsed Drain Current
(c)
I
DM
5.2 -4.5 A
Continuous Source Current (Body Diode)
(b)
I
S
2.3 -2.2 A
Pulsed Source Current (Body Diode)
(c)
I
SM
5.2 -4.5 A
Power Dissipation at T
A
=25°C
(a) (d)
Linear Derating Factor
P
D
1.3
10.4
W
mW/°C
Power Dissipation at T
A
=25°C (b) (d)
Linear Derating Factor
P
D
1.3
10.4
W
mW/°C
Operating and Storage Temperature Range T
j
, T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS