Diodes ZXMHC10A07T8 - Manual (Page 5)

ZXMHC10A07T8
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
5
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-100 V I
D
= -250 ␮A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
-1.0 ␮A V
DS
= -100V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
-2.0 -4.0 V I
D
= -250 ␮A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
1
1.45
⍀
⍀ V
GS
= -10V, I
D
= - 0.6A
V
GS
= -6V, I
D
= -0.5A
Forward Transconductance
(1) (3)
g
fs
1.2 S V
DS
= -15V, I
D
= -0.6A
DYNAMIC
(3)
Input Capacitance C
iss
141 pF
V
DS
= -50V, V
GS
=0V
f=1MHz
Output Capacitance C
oss
13.1 pF
Reverse Transfer Capacitance C
rss
10.8 pF
SWITCHING (2) (3)
Turn-On-Delay Time t
d(on)
1.6 ns
V
DD
= -50V, I
D
= -1A
R
G
≅ 6.0⍀, V
GS
= -10V
Rise Time t
r
2.1 ns
Turn-Off Delay Time t
d(off)
5.9 ns
Fall Time t
f
3.3 ns
Gate Charge Q
g
1.6 nC V
DS
= -50V, V
GS
= -5V
I
D
= -0.6A
Total Gate Charge Q
g
3.5 nC
V
DS
= -50V, V
GS
= -10V
I
D
= -0.6A
Gate-Source Charge Q
gs
0.6 nC
Gate Drain Charge Q
gd
1.6 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85 -0.95 V T
j
=25°C, I
S
= -0.75A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
29 ns T
j
=25°C, I
S
= -0.9A,
di/dt=100A/ ␮s Reverse Recovery Charge
(3)
Q
rr
31 nC
P-Channel
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
Յ 300␮s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.