Diodes ZXMHC10A07T8 - Manual (Page 4)

ZXMHC10A07T8
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
100 V I
D
= 250 ␮A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 ␮A V
DS
=100V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
2.0 4.0 V I
D
= 250 ␮A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.7
0.9
⍀
⍀ V
GS
= 10V, I
D
= 1.5A
V
GS
= 6V, I
D
= 1.0A
Forward Transconductance
(1) (3)
g
fs
1.6 S V
DS
= 15V, I
D
= 1.0A
DYNAMIC
(3)
Input Capacitance C
iss
138 pF
V
DS
= 60V, V
GS
=0V
f=1MHz
Output Capacitance C
oss
12 pF
Reverse Transfer Capacitance C
rss
6 pF
SWITCHING (2) (3)
Turn-On-Delay Time t
d(on)
1.8 ns
V
DD
= 50V, I
D
= 1.0A
R
G
≅ 6.0⍀, V
GS
= 10V
Rise Time t
r
1.5 ns
Turn-Off Delay Time t
d(off)
4.1 ns
Fall Time t
f
2.1 ns
Total Gate Charge Q
g
2.9 nC
V
DS
= 50V, V
GS
= 10V
I
D
= 1.0A
Gate-Source Charge Q
gs
0.7 nC
Gate Drain Charge Q
gd
1.0 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.95 V T
j
=25°C, I
S
= 1.5A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
27 ns T
j
=25°C, I
S
= 1.8A,
di/dt=100A/ ␮s Reverse Recovery Charge
(3)
Q
rr
12 nC
N-Channel
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
Յ 300␮s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.