Data sheet, High sensitivity cmos hall-effect latch ah921, Electrical characteristics – Diodes AH921 User Manual
Page 5: Magnetic characteristics, Parameter symbol conditions min typ max unit, Parameter symbol min typ max unit
Data Sheet
HIGH SENSITIVITY CMOS HALL-EFFECT LATCH AH921
Jul. 2011 Rev. 1. 2 BCD Semiconductor Manufacturing Limited
5
Electrical Characteristics
V
CC
=12V, T
A
=25°C, unless otherwise specified.
Parameter Symbol
Conditions
Min
Typ
Max
Unit
Supply Voltage
V
CC
Operating
3.5 12 24 V
V
CC
=12V, B<B
RP
3.0
5.0
mA
Supply Current
I
CC
V
CC
=12V, B>B
OP
3.0
5.0
mA
Saturation Voltage
V
SAT
I
OUT
=20mA, B>B
OP
185
500
mV
Output Leakage Current
I
LEAKAGE
V
CC
=V
OUT
=24V, B<B
RP
0.1
10
μA
Output Rising Time
t
RISING
C
L
=20pF
0.4
2
μs
Output Falling Time
t
FALLING
C
L
=20pF
0.4
2
μs
Magnetic Characteristics
V
CC
=12V, T
A
=25°C, unless otherwise specified.
Parameter Symbol
Min
Typ
Max
Unit
Operating Point
B
OP
5
22
40
Gauss
Releasing Point
B
RP
-40
-22
-5
Gauss
Hysteresis B
HYS
45
Gauss
Figure 4. Magnetic Flux Density of AH921