Diodes DMN3018SSS User Manual
Product summary, Description and applications, Features and benefits
DMN3018SSS
Document number: DS35501 Rev. 5 - 2
1 of 6
February 2012
© Diodes Incorporated
DMN3018SSS
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
30V
21m
Ω @ V
GS
= 10V
7.3A
35m
Ω @ V
GS
= 4.5V
5.5A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Backlighting
•
Power Management Functions
• DC-DC
Converters
Features and Benefits
• Low
On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
ESD Protected Gate
•
“Green” component and RoHS compliant (Notes 1 & 2)
•
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case:
SO-8
•
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
• Terminal
Connections
Indicator: See diagram
• Terminals:
Finish
⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.008 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMN3018SSS-13
SO-8
2500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our w3. For packaging details, go to our website at
Marking Information
Top View
Logo
Part no.
Year: “11” = 2011
1
4
8
5
N3018SS
YY WW
Xth week: 01 ~ 53
SO-8
Top View
Source
Gate
Protection
Diode
Gate
Drain
Body
Diode
Equivalent Circuit Per Element
S
D
D
G
D
D
S
S
Top View
Pin Configuration
ESD PROTECTED