Diodes DMN3018SSS User Manual
Page 4
DMN3018SSS
Document number: DS35501 Rev. 5 - 2
4 of 6
February 2012
© Diodes Incorporated
DMN3018SSS
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.4
0.8
1.2
1.6
2.0
2.4
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I = 1mA
D
I = 250µA
D
V
, G
A
TE TH
RESHO
L
D VO
L
T
AGE
(
V)
GS
(t
h
)
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1.0
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig.8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(V
)
S
T = 25°C
A
0
5
10
15
20
25
30
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
1
10
100
1,000
10,000
I,
D
R
AI
N
L
EAKA
G
E
C
U
R
R
E
N
T
(n
A
)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
5
10
15
20
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
10
100
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
iss
f = 1MHz
C
oss
C
rss
0
2
4
6
8
10
12
14
16
Q
(nC)
g
Fig. 11 Gate Charge
, TOTAL GATE CHARGE
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
V
= 15V, I = A
DS
D
9