Diodes DMN3018SSS - Manual (Page 2)

DMN3018SSS
Document number: DS35501 Rev. 5 - 2
2 of 6
www.diodes.com
February 2012
© Diodes Incorporated
DMN3018SSS
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 5) V GS = 10V
Steady
State
T
A
= 25
°C
T
A
= 70
°C
I
D
7.3
5.7
A
t<10s
T
A
= 25 °C
T
A
= 70 °C
I
D
9.7
7.8
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T A = 25
°C
T
A
= 70
°C
I D
5.5
4.3
A
t<10s
T
A
= 25
°C
T
A
= 70 °C
I
D
7.6
5.8
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
60 A
Maximum Body Diode continuous Current I
S
2.5 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
T
A
= 25°C
P
D
1.4
W
T
A
= 70°C 0.9
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R θJA
90 °C/W
t<10s 50 °C/W
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
1.7
W
T A = 70°C 1.1
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
75 °C/W
t<10s 42 °C/W
Thermal Resistance, Junction to Case (Note 5) R θJC 7.6 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
30 - - V V GS = 0V, I D = 250 μA
Zero Gate Voltage Drain Current I
DSS
- - 1 μA V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±10 μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1 1.7 2.1 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 15 21
mΩ
V
GS
= 10V, I
D
= 10A
- 20 35 V GS = 4.5V, I D = 8.5A
Forward Transfer Admittance |Y
fs
| - 8.3 - S V
DS
= 5V, I
D
= 6.9A
Diode Forward Voltage V
SD
0.5 - 1.2 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 697 - pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 97 - pF
Reverse Transfer Capacitance C rss
- 67 - pF
Gate resistance R
g
- 1.47 - Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
- 6.0 - nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 9A
Total Gate Charge (V GS = 10V) Q g
- 13.2 - nC
Gate-Source Charge Q
gs
- 2.2 - nC
Gate-Drain Charge Q
gd
- 1.8 - nC
Turn-On Delay Time t D(on)
- 4.3 - ns
V
DD
= 15V, V
GS
= 10V,
R L = 15 Ω,I
D = 1A, R G = 6 Ω
Turn-On Rise Time t
r
- 4.4 - ns
Turn-Off Delay Time t
D(off)
- 20.1 - ns
Turn-Off Fall Time t
f
- 4.1 - ns
Reverse Recovery Time T
rr
- 7.3 - ns
I
F
= 9A, di/dt = 500A/ μs
Reverse Recovery Charge Q
rr
- 7.9 - nC
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.