Diodes DMC2990UDJ - Manual (Page 3)

DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
3 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Electrical Characteristics Q1 N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
- - 100
nA
V
DS
= 16V, V
GS
= 0V
- - 50 V
DS
= 5V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
0.4 - 1.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
- 0.60 0.99
Ω
V
GS
= 4.5V, I
D
= 100mA
- 0.75 1.2 V
GS
= 2.5V, I
D
= 50mA
- 0.90 1.8 V
GS
= 1.8V, I
D
= 20mA
- 1.2 2.4 V
GS
= 1.5V, I
D
= 10mA
- 2.0 - V
GS
= 1.2V, I
D
= 1mA
Forward Transfer Admittance |Y
fs
| 180 850 - mS V
DS
= 5V, I
D
= 125mA
Diode Forward Voltage V
SD
- 0.6 1.0 V V
GS
= 0V, I
S
= 10mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
- 27.6 - pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 4.0 - pF
Reverse Transfer Capacitance C
rss
- 2.8 - pF
Gate Resistance R
G
- 113 - Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
- 0.5 - nC V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA Gate-Source Charge Q
gs
- 0.07 - nC
Gate-Drain Charge Q
gd
- 0.07 - nC
Turn-On Delay Time t
D(on)
- 4.0 - ns
V
DD
= 15V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 2Ω,
I
D
= 200mA
Turn-On Rise Time t
r
- 3.3 - ns
Turn-Off Delay Time t
D(off)
- 19.0 - ns
Turn-Off Fall Time t
f
- 6.4 - ns
Electrical Characteristics Q2 P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
- - 100
nA
V
DS
= -16V, V
GS
= 0V
- - 50 V
DS
= -5V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
-0.4 - -1.0 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS(ON)
- 1.2 1.9
Ω
V
GS
= -4.5V, I
D
= -100mA
- 1.5 2.4 V
GS
= -2.5V, I
D
= -50mA
- 2.1 3.4 V
GS
= -1.8V, I
D
= -20mA
- 2.5 5 V
GS
= -1.5V, I
D
= -10mA
- 4.0 - V
GS
= -1.2V, I
D
= -1mA
Forward Transfer Admittance |Y
fs
| 100 450 - mS V
DS
= -5V, I
D
= -125mA
Diode Forward Voltage V
SD
- -0.6 -1.0 V V
GS
= 0V, I
S
= -10mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
- 28.7 - pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 4.2 - pF
Reverse Transfer Capacitance C
rss
- 2.9 - pF
Gate Resistance R
G
- 399 - Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
- 0.4 - nC
V
GS
= -4.5V, V
DS
=- 10V,
I
D
= -250mA
Gate-Source Charge Q
gs
- 0.08 - nC
Gate-Drain Charge Q
gd
- 0.06 - nC
Turn-On Delay Time t
D(on)
- 5.8 - ns
V
DD
= -15V, V
GS
= -4.5V,
R
G
= 2Ω, I
D
= -200mA
Turn-On Rise Time t
r
- 5.7 - ns
Turn-Off Delay Time t
D(off)
- 31.1 - ns
Turn-Off Fall Time t
f
- 16.4 - ns
Notes: 9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.