Diodes DMC2990UDJ User Manual
Page 7
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
7 of 9
March 2013
© Diodes Incorporated
DMC2990UDJ
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE( C)
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
J
-V
,
GA
T
E
T
HRES
H
OL
D V
O
LT
AGE (
V
)
GS
(T
H
)
I = -250µA
D
I = -1mA
D
0
0.2
0.4
0.6
0.8
0.4
0.6
0.8
1.0
1.2
T = 25°C
A
V , SOURCE- DRAIN VOLTAGE (V)
Fig. 20 Diodes Forward Voltage vs. Current
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
f = 1MHz
C
iss
C
oss
C
rss
0
10
20
30
40
50
0
2
4
6
8
10
1
10
100
1,000
0
4
6
8
10
12 14
16 18
20
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Leakage Current vs.
Drain-Source Voltage
DS
-I
, L
E
AKAGE
CURRENT
(
nA)
DS
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = -25°C
A
2
Q , TOTAL GATE CHARGE (nC)
Fig. 23 Gate Charge Characteristics
G
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
18
V
= 10V, I = -4.5A
DS
D
-V
,
G
A
T
E S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 24 SOA, Safe Operation Area
P = 10s
W
P = DC
W
P = 1s
W
P = 100ms
W
I
, DRAI
N
CURREN
T
(
A
)
D
T
= 150 C
T = 25 C
Single Pulse
J(MAX)
A
R
Limited
DS(ON)
P = 1ms
W
P = 100µs
W
0.001
0.01
0.1
1
10
P = 10µs
W
P = 10ms
W