Document history page – Cypress CY14B101P User Manual

Page 31

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PRELIMINARY

CY14B101P

Document #: 001-44109 Rev. *B

Page 31 of 32

Document History Page

Document Title: CY14B101P 1 Mbit (128K x 8) Serial SPI nvSRAM with Real Time Clock
Document Number: 001-44109

REV.

ECN NO.

Submission

Date

Orig. of

Change

Description of Change

**

1939467

See ECN

UNC/AESA

New Data Sheet

*A

2607447

11/21/2008

GSIN/

GVCH/AESA

Updated the “Feature” section, Clock rate changed from 40 MHz to 25 MHz
Updated nvSRAM STORE, RECALL, AutoStore Enable/Disable sections
-- Removed Soft Sequence, added SPI instructions for STORE, RECALL,
AutoStore Enable and Disable, Updated SPI with following changes:
-- Added more information for protocol
-- Added four new SPI instruction
-- WEN bit cleared on CS going HIGH edge after Write instructions and four
nvSRAM special instructions
-- Added RDY bit to Status Register for indicating Store/Recall in progress
Added READ RTC and WRITE RTC instructions.
Changed RTC recommended configuration values.
Updated tOCS values for normal and room temperature
Other changes as per new EROS
-- Removed 8 SOIC package
-- Added two new 8DFN packages
-- Changed tCO parameter to 9 ns
-- Updated data sheet template
--Replaced CY14B101P with CY14B101PA.
Changed title to “CY14B101PA 1Mbit (128K x 8) Serial SPI nvSRAM with
Real-Time-Clock”

*B

2654487

02/04/2009

GVCH/GSIN/

PYRS

Moved from Advance information to Preliminary
Changed part number from CY14B101PA to CY14B101P
Changed X

1

, X

2

pin names to X

out

, X

in

respectively

Updated pin description of V

CAP

pin

Updated Device operation and SPI peripheral interface description
Added Factory setting values for BP1, BP2 and WPEN bits
Updated Real Time Clock operation description
Added footnote 2
Added default values to RTC Register Map” table 8
Added footnote 3
Updated flag register description in Register Map Detail” table 9
Changed C1, C2 values to 21pF, 21pF respectively
Changed I

CC2

from 5 mA to 10 mA

Changed I

BAK

value from 350 nA to 450 nA at hot temperature

Changed V

RTCcap

typical

value from 2.4V to 3.0V

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