Cypress CY7C1380C - Manual (Page 24)

CY7C1380C
CY7C1382C
Document #: 38-05237 Rev. *D Page 24 of 36
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage on V
DD
Relative to GND........ –0.3V to +4.6V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage ....................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Ambient
Temperature V
DD
V
DDQ
Commercial 0°C to +70°C 3.3V
– 5%/+10% 2.5V – 5%
to V
DD Industrial -40°C to +85°C
Electrical Characteristics Over the Operating Range [12, 13]
Parameter Description Test Conditions Min. Max. Unit
V
DD
Power Supply Voltage 3.135 3.6 V
V
DDQ
I/O Supply Voltage V
DDQ
= 3.3V 3.135 V
DD
V
V
DDQ
= 2.5V 2.375 2.625 V
V
OH
Output HIGH Voltage V
DDQ
= 3.3V, V
DD
= Min., I
OH
= –4.0 mA 2.4 V
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= –1.0 mA 2.0 V
V
OL
Output LOW Voltage V
DDQ
= 3.3V, V
DD
= Min., I
OL
= 8.0 mA 0.4 V
V
DDQ
= 2.5V, V
DD
= Min., I
OL
= 1.0 mA 0.4 V
V
IH
Input HIGH Voltage
[12]
V
DDQ
= 3.3V 2.0 V
DD
+ 0.3V V
V
DDQ
= 2.5V 1.7 V
DD
+ 0.3V V
V
IL
Input LOW Voltage [12] V
DDQ
= 3.3V –0.3 0.8 V
V
DDQ
= 2.5V –0.3 0.7 V
I
X
Input Load Current ex-
cept ZZ and MODE GND
≤ V
I
≤ V
DDQ
–5 5
µA
Input Current of MODE Input = V
SS
–30
µA
Input = V
DD
5
µA
Input Current of ZZ Input = V
SS
–30
µA
Input = V
DD
5
µA
I
OZ
Output Leakage Current GND
≤ V
I
≤ V
DDQ,
Output Disabled –5 5
µA
I
DD
V
DD
Operating Supply
Current
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
4.0-ns cycle, 250 MHz 350 mA
4.4-ns cycle, 225 MHz 325 mA
5.0-ns cycle, 200 MHz 300 mA
6.0-ns cycle, 167 MHz 275 mA
7.5-ns cycle, 133 MHz 245 mA
I
SB1
Automatic CE
Power-down
Current—TTL Inputs V
DD
= Max, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
f = f
MAX
= 1/t
CYC
4.0-ns cycle, 250 MHz 120 mA
4.4-ns cycle, 225 MHz 110 mA
5.0-ns cycle, 200 MHz 100 mA
6.0-ns cycle, 167 MHz 90 mA
7.5-ns cycle, 133 MHz 85 mA
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs V
DD
= Max, Device Deselected,
V
IN
≤ 0.3V or V
IN
> V
DDQ
– 0.3V,
f = 0
All speeds 70 mA
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