Vishay semiconductors, Absolute maximum ratings (t, Electrical specifications (t – C&H Technology VS-GT300YH120N User Manual
Page 3
VS-GT300YH120N
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Vishay Semiconductors
Revision: 25-Jul-13
2
Document Number: 94681
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Note
(1)
Max. RMS current admitted for the terminals 10 A
Maximum power dissipation
P
D
T
C
= 80 °C
438
W
T
C
= 25 °C
781
ANTPARALLEL DIODE
Continuous forward current
I
F
(1)
T
C
= 80 °C
36
A
T
C
= 25 °C
51
Peak repetitive forward current
I
FSM
n/a
A
Maximum power dissipation
P
D
T
C
= 80 °C
77
W
T
C
= 25 °C
137
MODULE
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 minute
4000
V
Junction temperature range
T
J
- 40 °C to 150 °C
°C
Storage temperature range
T
STG
- 40 °C to 150 °C
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
IGBT
Collector to emitter breakdown voltage
V
(BR)CES
V
GE
= 0 V, I
C
= 0.5 mA, T
J
= 25 °C
1200
-
-
V
Collector to emitter saturation voltage
V
CE(on)
V
GE
= 15 V, I
C
= 300 A, T
J
= 25 °C
-
2.17
-
V
GE
= 15 V, I
C
= 300 A, T
J
= 125 °C
-
2.4
-
Gate to emitter threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 14 mA, T
J
= 25 °C
4.7
5.6
7.8
Collector to emitter leakage current
I
CES
V
GE
= 0 V, V
CE
= 1200 V
-
0.003
0.3
mA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
-
1.03
-
Gate to emitter leakage current
I
GES
V
GE
= ± 30 V
-
-
400
nA
SERIES DIODE
Cathode to anode breakdown voltage
V
R
I
C
= 1.0 mA, T
J
= 125 °C
1200
-
-
Cathode to anode leakage current
I
R
V
R
= 1200 V
-
0.003
0.2
mA
V
R
= 1200 V, T
J
= 125 °C
-
3.5
-
Forward voltage
V
F
I
F
= 300 A
-
1.99
-
V
I
F
= 300 A, T
J
= 125 °C
-
2.02
-
ANTIPARALLEL DIODE
Forward voltage
V
F
I
F
= 10 A
-
1.6
-
V
I
F
= 10 A, T
J
= 125 °C
-
1.4
-
IGBT AND HEXFRED
®
SERIES DIODE
Collector to emitter saturation voltage +
Forward voltage
V
CE(on)
+ V
F
I
C
= 300 A
-
4.12
4.65
V