Vishay semiconductors – C&H Technology VS-GT300YH120N User Manual
Page 8
VS-GT300YH120N
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Vishay Semiconductors
Revision: 25-Jul-13
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Document Number: 94681
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Fig. 19 - Typical Q
rr
Antiparallel Diode vs. di
F
/dt, V
rr
= 400 V
Fig. 20 - Typical t
rr
Series Diode vs. di
F
/dt, V
rr
= 400 V, I
F
= 50 A
Fig. 21 - Typical I
rr
Chopper Diode vs. di
F
/dt, V
rr
= 400 V, I
F
= 50 A
Fig. 22 - Typical Q
rr
Chopper Diode vs. di
F
/dt, V
rr
= 400 V, I
F
= 40 A
Fig. 23 - Maximum Thermal Impedance Z
thJC
Characteristics IGBT
3000
4000
5000
6000
Q
rr
(nC)
0
1000
2000
100
200
300
400
500
di
F
/dt (A/μs)
10 A, T
J
= 125 °C
10 A, T
J
= 25 °C
40 A, T
J
= 25 °C
40 A, T
J
= 125 °C
t rr
(
ns)
di
F
/dt (A/μs)
200
250
300
350
400
450
500
550
600
100
200
300
400
500
T
J
= 25 °C
T
J
= 125 °C
di
F
/dt (A/μs)
0
10
20
30
40
50
100
200
300
400
500
I
rr
(A)
T
J
= 25 °C
T
J
= 125 °C
di
F
/dt (A/μs)
1000
2000
3000
4000
5000
6000
7000
8000
9000
10 000
100
200
300
400
500
Q
rr
(nC)
T
J
= 25 °C
T
J
= 125 °C
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impe
d
ance
Junction to Case (°C/W)
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
D = 0.50
D = 0..20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC