Vishay semiconductors – C&H Technology VS-GT300YH120N User Manual
Page 9
VS-GT300YH120N
www.vishay.com
Vishay Semiconductors
Revision: 25-Jul-13
8
Document Number: 94681
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Fig. 24 - Maximum Thermal Impedance Z
thJC
Characteristics Series Diode
CIRCUIT CONFIGURATION
ORDERING INFORMATION TABLE
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impe
d
ance
Junction to Case (°C/W)
11
9
6
7
5
4
1
2
3
1
-
Insulated Gate Bipolar Transistor (IGBT)
-
Vishay Semiconductors product
2
-
T = Trench IGBT technology
3
-
Current rating (300 = 300 A)
4
-
Y = Current Fed Inverter
5
-
Package indicator (Double INT-A-PAK)
6
-
Voltage rating (120 = 1200 V)
7
8
-
N = Ultrafast
Device code
5
1
3
2
4
6
7
8
G
VS-
T
300
Y
H
120
N