Vishay semiconductors – C&H Technology VS-GT300YH120N User Manual
Page 4
VS-GT300YH120N
www.vishay.com
Vishay Semiconductors
Revision: 25-Jul-13
3
Document Number: 94681
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SWITCHING CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
IGBT
Turn-on switching loss
E
on
V
CC
= 600 V, I
C
= 300 A, R
g
= 4.7
,
V
GE
= ± 15 V
-
35.2
-
mJ
Turn-off switching loss
E
off
-
26.3
-
Turn-on delay time
t
d(on)
V
CC
= 600 V, I
C
= 300 A, R
g
= 4.7
,
V
GE
= ± 15 V, T
J
= 125 °C
-
776
-
ns
Rise time
t
r
-
263
-
Turn-off delay time
t
d(off)
-
816
-
Fall time
t
f
-
131
-
Turn-on switching loss
E
on
-
36.1
-
mJ
Turn-off switching loss
E
off
-
32.1
-
Input capacitance
C
ies
V
CE
= 30 V, f = 1.0 MHz
-
36
-
nF
Output capacitance
C
oes
-
1.4
-
Reverse transfer capacitance
C
res
-
1.0
-
Reverse bias save operating area
RBSOA
T
J
= 150 °C, R
g
= 22
,
V
GE
= 15 V to 0 V, V
CC
= 600 V,
V
P
= 1200 V, I
C
= 700 A
-
-
-
Short circuit save operating area
SCSOA
T
J
= 150 °C, R
g
= 22
,
V
GE
= 15 V to 0 V, V
CC
= 600 V,
V
P
= 1200 V
-
-
10
μs
SERIES DIODE
Diode reverse recovery charge
Q
rr
I
F
= 50 A,
V
R
= 400 V,
dI/dt = - 500 A/μs
T
J
= 25 °C
-
3.0
-
μC
T
J
= 125 °C
-
8.0
-
Reverse recovery time
t
rr
T
J
= 25 °C
-
230
-
nS
T
J
= 125 °C
-
370
-
Reverse recovery current
I
rr
T
J
= 25 °C
-
26
-
A
T
J
= 125 °C
-
43
-
ANTIPARALLEL DIODE
Diode reverse recovery charge
Q
rr
I
F
= 10 A,
V
R
= 400 V,
dI/dt = 500 A/μs
T
J
= 25 °C
-
2.1
-
μC
T
J
= 125 °C
-
3.4
-
Reverse recovery time
t
rr
T
J
= 25 °C
-
175
-
ns
T
J
= 125 °C
-
241
-
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Junction to case
per ½ module
IGBT
R
thJC
-
-
0.12
°C/W
Series Diode
-
-
0.16
Antiparallel Diode
-
-
0.91
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M6
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
300
g