Vishay semiconductors – C&H Technology VS-GT300YH120N User Manual
Page 6
VS-GT300YH120N
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Vishay Semiconductors
Revision: 25-Jul-13
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Document Number: 94681
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Fig. 7 - Typical IGBT Gate Threshold Voltage
Fig. 8 - Maximum Continuous Forward Current vs.
Case Temperature Series Diode
Fig. 9 - Typical Series Diode Forward Voltage
Fig. 10 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode
Fig. 11 - Typical Diode Forward Voltage Characteristics of
Antiparallel Diode t
p
= 500 μs
Fig. 12 - Typical Series Diode Leakage Current vs. Reverse Voltage
2
3
4
5
6
0
2
4
6
8
10
12
14
V
G
Eth
(V)
I
C
(mA)
T
J
= 25 °C
T
J
= 125 °C
I
F
-
Continuous
Forward Current (A)
Allowable Case Temperature (°C)
0.00
20.00
40.00
60.00
80.00
100.00
120.00
140.00
160.00
0
50
100
150
200
250
300
350
400
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous Forwar
d
Dr
op (A)
0
50
100
150
200
250
300
350
400
450
500
550
600
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
Allowable Case Temperature (°C)
0.00
20.00
40.00
60.00
80.00
100.00
120.00
140.00
160.00
0
10
20
30
40
50
60
I
F
-
Continuous
Forward Current (A)
0
10
20
30
40
50
60
70
80
90
100
0.5
1
1.5
2
2.5
3
3.5
4
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
V
F
-
Anode to Cathode Forward Voltage Drop (V)
I
F
(A)
V
R
(V)
I
R
(mA)
0.0001
0.001
0.01
0.1
1
10
100
100 200 300 400 500 600 700 800 900 1000 1100 1200
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C